PART |
Description |
Maker |
M68757L 68757L |
From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO 硅场效应晶体管功率放大器06 - 870MHzW,便携式收音机调
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
PF0310A |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
M68742 68742 |
SILICON MOS FET POWER AMPLIFIER / 903-905MHz / 1.8W / FM PORTABLE RADIO From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
PF0414B PF0414 |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
M67799UHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
Hitachi Semiconductor Renesas Electronics Corporation
|
E2081606PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块,电子GSM和DCS1800/1900三频手持电话
|
Renesas Electronics, Corp.
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
2SK410 |
RF POWER, FET From old datasheet system Silicon N-Channel MOS FET (HF/VHF power amplifier)
|
Hitachi Semiconductor
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