| PART |
Description |
Maker |
| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| UN6123 UNR6123 UN6124 UNR6124 UN6122 UNR6122 UN612 |
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71VAR
UNR612X Series (UN612X Series) - PNP Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| MUN5111 |
(MUN5111 Series) Bias Resistor Transistor PNP Silicon
|
Weitron Technology
|
| PDTA123YT215 PDTA123YE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTA114EM |
PDTA114E series; PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm
|
Philips
|
| PDTA143XS |
PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
|
Philips
|
| DTA143ZKAT146 DTA143ZE DTA143ZEB DTA143ZEBTL |
DTA143Z series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PDTA143ZEF PDTA143ZU PDTA143ZK |
PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=4.7千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| UN4212 UNR4212 UN4211 UN4216 UNR4216 UN4213 UNR421 |
Composite Device - Transistors with built-in Resistor 复合装置-内置晶体管，电阻
UNR421X Series (UN421X Series) - NPN Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
