PART |
Description |
Maker |
PD100F6 |
FRD MODULE - 100A/600V/trr:110nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
STY60NM60 |
N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh⑩Power MOSFET N-CHANNEL 600V - 0.50 OHM - 60A MAX247 ZENER-PROTECTED MDMESH POWERMOSFET N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh?Power MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
FFH60UP60S |
60A, 600V, UItrafast Diode
|
Fairchild Semiconductor
|
U60D60 U60D30 U60D40 U60D50 |
POWER RECTIFIERS(60A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
30PRA60 |
FRD - 3A 600A 210ns FRD HIGH SURGE CAPABILITY
|
ETC NIEC[Nihon Inter Electronics Corporation]
|
PC100F5 |
FRD MODULE
|
Nihon Inter Electronics Corporation
|
FRS300BA50 |
DIODE MODULE FRD
|
List of Unclassifed Manufacturers ETC[ETC]
|
P2H80F2 |
FRD MODULE 80A/200V
|
NIEC[Nihon Inter Electronics Corporation]
|
PD300F12 |
FRD MODULE - 300A/1200V/trr:250nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
IRG4PSC71KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=1.83V @Vge=15V Ic=60A)
|
IRF[International Rectifier]
|
IRG4PSC71UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
|
IRF[International Rectifier]
|
RJU60C3WDPP-M0 RJU60C3WDPP-M0T2 |
600V - 60A - Dual Diode Fast Recovery Diode
|
Renesas Electronics Corporation
|