| PART |
Description |
Maker |
| NX8312UD-AZ NX8312UD |
NECs 1310 nm InGaAsP MQW DFB TOSA FOR SHORT HAUL 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX8310UA-AZ NX8310UA |
NECs 1310 nm InGaAsP MQW DFB TOSA FOR LONG HAUL 622 Mb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5304 NX5304EK NX5304EH |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
NEC[NEC]
NEC Corp.
|
| NX5307EK-AZ NX5307 NX5307EH-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
|
CEL[California Eastern Labs]
|
| NX7329BB-AA-AZ NX7329BB-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7327BF-AA-AZ NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7329BB-AA NX7329BB-AA-AZ |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN) 邻舍1310纳米InGaAsP多量子阱计划生育脉冲LADER二极管的ITDR应用5毫瓦闵同轴封装）
|
http://
California Eastern Laboratories, Inc.
|
| NX6506GH-AZ NX6506GK-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX6406GK-AZ NX6406 NX6406GH-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8503CG-CC NX8503BG-CC NX8503CG NX8503BG |
TVS BIDIRECT 1500W 14V SMC
NECs 1550 nm InGaAsP MQW DFB LASER DIODE
|
NEC Corp.
NEC[NEC]
http://
|
| NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
California Eastern Laboratories
http://
|
| NX8341UN-AZ NX8341 NX8341UH-AZ |
NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
