| PART |
Description |
Maker |
| NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70
Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| NTE2078 |
Integrated Circuit 5-Stage Darlington Transistor Array
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE2084 |
Integrated Circuit 5−Stage Darlington Transistor Array
|
NTE Electronics
|
| NTE1855 |
Integrated Circuit Vertical Deflection Output Circuit w/Driver Circuit for TV Monitor
|
NTE[NTE Electronics]
|
| NTE7085 |
Integrated Circuit Vertical Deflection Output Circuit w/Drive Circuit for Monitor
|
NTE[NTE Electronics]
|
| NTE2033 |
Integrated Circuit Non-Inverting Transistor Array, Low Input Active
|
NTE[NTE Electronics]
|
| RN2707JE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2111FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN1967FE RN1968FE RN1969FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN1702JE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
