| PART |
Description |
Maker |
| NTD3055-150T4G NTD3055-150 NTD3055-150-1 NTD3055-1 |
Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60V锛????锛?PAK灏???????OSFET)
Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60VN通道，DPAK封装的功率MOSFET)
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Power MOSFET 9.0 A, 60 V 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTD3055-094 NTD3055-094T4G NTD3055-094-1 NTD3055-0 |
Power MOSFET 12 A, 60 V
Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60VN通道，DPAK封装的功率MOSFET)
Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60V，N通道，DPAK封装的功率MOSFET)
Power MOSFET 12 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| NTD24N06L NTD24N06L-1 NTD24N06L-1G NTD24N06LG NTD2 |
Power MOSFET 24 Amps, 60 Volts, Logic Level N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V，逻辑电平，N通道，DPAK封装的功率MOSFET)
Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
|
ON Semiconductor
|
| MBR1060CT MBR1030CT |
10Amp schottky barrier rectifier 30-60volts
|
Shanghai Lunsure Electronic Tech
|
| VFD10C10 VFD10C05 |
10.0AMPS ULTRA FAST SURFACE MOUNT POWER RECTIFIERS
|
First Components International
|
| MBR10H100CT |
10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency
|
Taiwan Semiconductor Co...
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRFZ44VL IRFZ44VS IRFZ44VSTRR |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
(IRFZ44VL / IRFZ44VS) Power MOSFET
|
IRF[International Rectifier]
|
| SRA1690 SRA1650 |
16.0AMPS. Schottky Barrier Rectifiers
|
Taiwan Semiconductor Company, Ltd
|
| SRA10150 SRA1030 SRA10100 SRA1020 SRA1040 SRA10201 |
10.0AMPS. Schottky Barrier Rectifiers
|
http://
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