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NTD18N06LT4G - Power MOSFET 18 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK

NTD18N06LT4G_1289925.PDF Datasheet

 
Part No. NTD18N06LT4G NTD18N06 NTD18N06L NTD18N06L-1 NTD18N06L-1G NTD18N06LG NTD18N06LT4 NTD18N06L-001
Description Power MOSFET 18 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK

File Size 80.04K  /  8 Page  

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 Full text search : Power MOSFET 18 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK


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From old datasheet system
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30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
INTERSIL[Intersil Corporation]
Intersil, Corp.
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STMICROELECTRONICS[STMicroelectronics]
UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
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意法半导
STMicroelectronics N.V.
2SC5809 Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Power Device - Power Transistors - Swicthing
Panasonic, Corp.
AUIRF1404Z AUIRF1404ZL AUIRF1404ZS HEXFET垄莽 Power MOSFET
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List of Unclassifed Man...
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HEXFET? Power MOSFET
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Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
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Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Sensitron Semiconductor
http://
0879331007 87933-1007 1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05μm (2μ) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05渭m (2渭) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
http://
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AUIRFZ44Z AUIRFZ44ZS AUIRFZ44ZSTRL AUIRFZ44ZSTRR HEXFET庐 Power MOSFET
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