| PART |
Description |
Maker |
| N02L63W3A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02L1618C1AT2-70I N02L1618C1A N02L1618C1AB N02L161 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02L083WC2AT2 N02L083WC2A N02L083WC2AN N02L083WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
| N02M0818L1 N02M0818L1AN-85I N02M0818L1A N02M0818L1 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02M083WL1AN-70I N02M083WL1A N02M083WL1AD N02M083W |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| ISL55291 ISL55291EVAL1Z ISL55291IUZ ISL55291IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op Amp
|
http://
Intersil Corporation
|
| HA3-5142-5 HA7-5142-2 HA-5142 FN2909 |
Op Amp, Dual 400kHz, Ultra-Low Power, Unity Gain
Dual, 400kHz, Ultra-Low Power Operational Amplifier
Dual/ 400kHz/ Ultra-Low Power Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
