| PART |
Description |
Maker |
| MX29LV128DBT2C-90Q |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| MX29LA128MTTI-90R MX29LA128MB MX29LA128MBTC-10 MX2 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29LA128MBTC-90R MX29LA128MTTC-10 MX29LA128MBTC-1 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX23L12854 MX23L12854MC-20G |
128M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
MXIC
MCNIX[Macronix International]
|
| AD5344 AD5340BRU AD5341 AD5330 AD5331 AD5331BRU AD |
Dual 12-bit 65MSPS ADC with serialized LVDS Output 48-VQFN -40 to 85
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs PARALLEL, WORD INPUT LOADING, 7 us SETTLING TIME, 10-BIT DAC, PDSO20
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs 2.5 V.5 V15微安，并行接口单电压输出DAC-/10-/12-Bit
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs PARALLEL, WORD INPUT LOADING, 8 us SETTLING TIME, 12-BIT DAC, PDSO20
|
Analog Devices, Inc.
|
| 28C17A-25/K 28C17A-25I/K 28C17AF-25/K 28C17A-20/K |
5V, Low-Power, Parallel-Input, Voltage-Output, 12-Bit DAC
12-Bit DACs with 32-Channel Sample-and-Hold Outputs
Evaluation Kit/Evaluation System for the MAX5417_, MAX5418_, MAX5419_
128Kx8 EEPROM
5V, Low-Power, Voltage-Output, Serial 12-Bit DACs
10-Bit Voltage-Output DACs in 8-Pin µMAX
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs x8的EEPROM
|
STMicroelectronics N.V.
|
| MX23L12822 23L12822 |
128M-BIT MASK ROM (16/32 BIT OUTPUT)
From old datasheet system
|
Macronix 旺宏
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 |
128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM
128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
|
NEC
|
| MBM29QM12DH MBM29QM12DH-60 MBM29QM12DH60 MBM29QM12 |
128M (8M X 16) BIT 128M的（8米16）位
|
Fujitsu Component Limited.
Omron Electronics LLC Industrial Automation
|
