| PART |
Description |
Maker |
| MX27L2000TI-25 27L2000-12 27L2000-15 27L2000-20 27 |
2M-BIT [256Kx8] CMOS EPROM
|
MCNIX[Macronix International]
|
| 27L2000-15 27L2000-25 27L2000-12 27L2000-20 27L200 |
2M-BIT [256Kx8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| N02L1618C1AT2-70I N02L1618C1A N02L1618C1AB N02L161 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| MX27C2100 MX27C2048 27C2100 |
2M-BIT [256Kx8/128x16] CMOS EPROM
From old datasheet system
|
Macronix 旺宏
|
| N02M0818L1 N02M0818L1AN-85I N02M0818L1A N02M0818L1 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6F2008T2E-YF55 K6F2008T2E-YF70 K6F2008T2E K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K6F2008S2E-F K6F2008S2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16
020419-0023 超低功率/电压CMOS SRAM28K的16
Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85
JT 55C 55#20 SKT PLUG
Asynchronous 2M(128Kx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer
RAM size: 1536bytes single chip 8-bit CMOS microcomputer
RAM size: 768bytes single chip 8-bit CMOS microcomputer
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
3803/04 Group: General Purpose, with Flash
RAM size: 256bytes single chip 8-bit CMOS microcomputer
RAM size: 640bytes single chip 8-bit CMOS microcomputer
RAM size: 896bytes single chip 8-bit CMOS microcomputer
RAM size: 512bytes single chip 8-bit CMOS microcomputer
RAM size: 384bytes single chip 8-bit CMOS microcomputer
RAM size: 1024bytes single chip 8-bit CMOS microcomputer
RAM size: 3804bytes single chip 8-bit CMOS microcomputer
RAM size: 192bytes single chip 8-bit CMOS microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
