PART |
Description |
Maker |
MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS82582QT20GE-375 GS82582QT20GE-450I GS82582QT20GE |
288Mb SigmaQuad-II TM Burst of 2 SRAM
|
GSI Technology
|
K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4 |
288Mb x18 Network-DRAM2 Specification
|
Samsung Electronic
|
K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
IDTIDT71P79104167BQ IDTIDT71P79104167BQI IDTIDT71P |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2
|
Integrated Device Technology
|
CY7C1393KV18 CY7C1393KV18-250BZI CY7C1394KV18 |
18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1523KV18 CY7C1524KV18 |
72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1623KV18 CY7C1623KV18-333BZXC |
144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|