Part Number Hot Search : 
C2705 040AP90B E000973 7SZ08 47N60B 2N685 XN4116 A1441
Product Description
Full Text Search

MRF9030NBR1 - RF Power Field Effect Transistors

MRF9030NBR1_1283675.PDF Datasheet

 
Part No. MRF9030NBR1 MRF9030MBR1 MRF9030MR1 MRF9030NR1
Description RF Power Field Effect Transistors

File Size 289.34K  /  12 Page  

Maker

FREESCALE[Freescale Semiconductor, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF9030
Maker: MOTOROLA
Pack: 高频管
Stock: Reserved
Unit price for :
    50: $30.46
  100: $28.94
1000: $27.42

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF9030NBR1 MRF9030MBR1 MRF9030MR1 MRF9030NR1 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF9030NBR1 MRF9030MBR1 MRF9030MR1 MRF9030NR1 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF9030NBR1 ]

[ Price & Availability of MRF9030NBR1 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors
 Product Description search : RF Power Field Effect Transistors


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MTM8N60 MTH8N60 MTH8N55 (MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
RFH35N10 RFH35N08 POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MTD1N40 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MRF19125 MRF19125R3 MRF19125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
MRF9030NBR1 Specification of MRF9030NBR1 Manufacturer MRF9030NBR1 timer MRF9030NBR1 Phase MRF9030NBR1 Amplifiers
MRF9030NBR1 microsemi MRF9030NBR1 Corporation MRF9030NBR1 marking code MRF9030NBR1 amplifier MRF9030NBR1 pressure sensor
 

 

Price & Availability of MRF9030NBR1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.33084487915039