| PART |
Description |
Maker |
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| SP7103 |
10 MHz - 150 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SPECTRUM CONTROL INC
|
| UPB556C |
150 Mhz Divide By 16/17 Low Power Prescaler
|
NEC
|
| PTB20081 |
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| PTB20177 |
150 Watts, 925-960 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| M31002ANPN M31012ANPN M31022ANPN M31006ANPN M31026 |
VCXO, CLOCK, 150 MHz - 1400 MHz, LVDS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
9x14 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
5x7 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
|
MTRONPTI
|
| PTFA041501E PTFA041501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
|
Infineon Technologies AG
|
| PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| MRF151 |
RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| PXFC191507FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| PTFB211501F PTFB211501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
|
