| PART |
Description |
Maker |
| AT31011 |
Low Current/ High Performance NPN Silicon Bipolar Transistor
|
Agilent
|
| MP4T64533 |
Silicon Bipolar High fT Low Noise Microwave Transistors 硅双极高fT的微波低噪声晶体
|
M-Pulse Microwave, Inc.
|
| MP4T24335 MP4T243 MP4T24300 |
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| MC33076DR2 MC330761 MC33076P1 MC33076-D |
Dual High Output Current, Low Power, Low Noise Bipolar Operational Amplifier
|
ON Semiconductor
|
| AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-415 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor 通用型，低噪声NPN硅双极晶体管
General Purpose/ Low Noise NPN Silicon Bipolar Transistor
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| UPC2714T-E3 UPC2715T UPC2714T |
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.8 GHz的低功耗宽带放大器硅双极单片集成电
LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41435G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| BFP760 BFP760-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
