| PART |
Description |
Maker |
| SI7445DP-T1-E3 SI7445DP-T1-GE3 |
12 A, 20 V, 0.0077 ohm, P-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
12 A, 20 V, 0.0077 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
Vishay Intertechnology, Inc.
|
| SQJ463EP-T1-GE3 |
11 A, 40 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8, 4 PIN
|
Vishay Intertechnology, Inc.
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W0 |
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Cyclone FPGA 6K PQFP-240 I2C串行EEPROM
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.5W; Resistance, Rds on:0.015R; SMD:1; 1000串行EEPROM128 × 8
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:40A; Power, Pd:1.9W; Resistance, Rds on:15R; SMD:1; Charge, gate 000串行EEPROM28 × 8
IC FLEX 10K AKA FPGA I2C串行EEPROM
SERIAL 1K 128 x 8 EEPROM 000串行EEPROM28 × 8
Stratix GX FPGA 10K 4-FBGA
IC FLEX 10KA FPGA
IC FLEX 6000 FPGA 24K 208-PQFP
IC APEX 20KE FPGA 200K
IC FLEX 10KB FPGA 100K
IC APEX 20KE FPGA 400K
(ST2xxx) SERIAL 1K 128 x 8 EEPROM
From old datasheet system
SERIAL 1K (128 x 8) EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| SI7137DP SI7137DP-T1-GE3 |
P-Channel 20-V (D-S) MOSFET
42 A, 20 V, 0.00195 ohm, P-CHANNEL, Si, POWER, MOSFET HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| IR422DP-T1-GE3 |
Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R
|
Vishay Siliconix
|
| SI7923DN-T1-GE3 |
Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R
|
Vishay Siliconix
|
| SI7540DP SI7540DP-E3 |
7.6 A, 12 V, 0.017 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET POWERPAK, SO-8
N- AND P-CHANNEL 12-V (D-S) MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| IR432DP-T1-GE3 SIR432DP |
Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R
N-Channel 100-V (D-S) MOSFET
|
Vishay Siliconix
|
| SI7222DN-T1-GE3 SI7222DN-T1-E3 |
Trans MOSFET N-CH 40V 5.7A 8-Pin PowerPAK 1212 T/R
MOSFET DUAL N-CH 40V 1212-8
|
Vishay Siliconix
|
| ST26C32A ST26C32ABD ST26C32ABDR ST26C32ABN ST26C32 |
FPGA, FLEX 10KE, 30K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K30E; Voltage, supply:2.5V; Case style
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:5R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
CMOS QUAD 3-STATE DIFFERENTIAL LINE RECEIVER
|
意法半导
STMicroelectronics
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
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