| PART |
Description |
Maker |
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| XR494 XR2002 XR1468 XR-1468 XR1488 XR-1488 XR1488N |
DAA Module, Half Wave Ring Detection, CID 高电压，大电流达林顿晶体管阵
OPTOCOUPLER SGL TRANS-OUT 6-SMD
CAP 2200UF 10V ELECT FK SMD
OPTOCOUPLER SOLID STATE CURRENT SENSOR, 6 PIN SMD SMD
FET N-CHAN RON 10OHM LITELINK
Optocoupler with a single or darlington transistor output
From old datasheet system
High-Voltage, High-Current Darlington Transistor Arrays
|
Exar, Corp.
EXAR[Exar Corporation]
|
| CBR06C179BAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.7 pF, /-0.1 pF, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C160FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 16 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C559B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 5.5 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR02C110F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 11 pF, 1%, 50 V, 0201, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C609B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 6 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| CBR04C309B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 3 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C179B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.7 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CT1008HQF CT1008HQF-10NG CT1008HQF-10NJ CT1008HQF- |
1 ELEMENT, 0.056 uH, GENERAL PURPOSE INDUCTOR, SMD
SMD Wire-wound Chip Inductors - High Q
|
http://
Central Technologies
|
| CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode
SMD Switching Diode Dual: In Series
SMD Switching Diode Single: High Voltage
SMD Switching Diode Dual: Common Cathode
SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
|
