| PART |
Description |
Maker |
| MIG150J7CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| C67076-A1004-A2 BSM151 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 48 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MIG30J103H |
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4211 |
POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MIG300Q101H |
Intelligent Power Module Silicon N Channel IGBT 智能功率模块IGBT的硅频道
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MIG50Q6CSB1X |
From old datasheet system
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MIG400J2CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MIG100J6CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
