| PART |
Description |
Maker |
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| TC1501N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1401N |
0.5 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL21E180IU |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E180IU |
High Voltage - High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|
| FLL800IQ-2C |
L-Band High Power GaAs FET
|
etc
List of Unclassifed Manufacturers
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
