| PART |
Description |
Maker |
| MIE-534A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-406A4U |
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-324A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SHF-0186 |
DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化镓异质结场效应晶体管
DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
|
Electronic Theatre Controls, Inc.
ETC[ETC]
Stanford Microdevices
|
| MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-516A2U 516A2U |
Infrared Emitting Diodes (UL Listed)
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| BL-B6174 |
Chip material: AlGaAs/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BD-E54DRD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BD-E286RD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BD-A406ND |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BA-8D6UW |
super red chips which are made from AlGaAs on GaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
