| PART |
Description |
Maker |
| MIE-144A4 |
AlGaAs/GaAs High POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-111A1 |
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| BC856S Q62702-C2532 Q62702G0077 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
From old datasheet system
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| AMMP-6222 AMMP-6222-BLKG AMMP-6222-TR1G AMMP-6222- |
7 to 21 GHz GaAs High Linearity LNA in SMT Package
|
http://
AVAGO TECHNOLOGIES LIMITED
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| TC1401 |
0.5 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
