PART |
Description |
Maker |
MH16M40AJD-6 MH16M40AJD |
FAST PAGE MODE ( 16 /777 /216-WORD BY 40-BIT ) DYNAMIC RAM FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MSM5116100A |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
|
MSM514100D MSM514100DL MSM514100D-50SJ MSM514100D- |
DRAM / FAST PAGE MODE TYPE 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE From old datasheet system
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MSM51V16165A |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets]
|
HM5116100S-5 |
16,777,216-word x 1-bit Dynamic RAM
|
Hitachi Semiconductor
|
MSM51V16160D MSM51V16160DSL |
DRAM / FAST PAGE MODE TYPE 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets] OKI electronic components
|
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
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HM5116100 5116100 |
16,777,216-word ′ 1-bit Dynamic RAM From old datasheet system
|
hitachi
|
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位(2097,152 - Word 1048,576字BY16位)的CMOS 3.3只,块擦除闪
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Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29 |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory From old datasheet system 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY CMOS 3.3V-only block erase flash memory
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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MSC23V26418TD-XXBS8 MSC23V26418TD MSC23V26418TD-60 |
2M X 64 FAST PAGE DRAM MODULE, 60 ns, DMA168 From old datasheet system 2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
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OKI ELECTRIC INDUSTRY CO LTD
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