| PART |
Description |
Maker |
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET
|
NEC
|
| MGFK37V4045 |
14.0-14.5 GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK33V4045 |
14.0-14.5 GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V7785A |
7.7-8.5 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V4450A |
4.4-5.0 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
