| PART |
Description |
Maker |
| MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V4450A_03 MGFC45V4450A MGFC45V4450A03 |
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3436A |
3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58011U |
7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
Micrel Semiconductor,Inc.
|
| MGFC45V5867 |
MGFC45V5867
5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| IRPLLNR2U IRPLLNR2E |
32W Fully-integrated linear lighting ballast, IR21571, U.S. version, 120VAC line, 32W/T8 lamp
Fully-integrated linear lighting ballast, IR21571, European version, 230VAC line, 36W/T8 lamp
|
International Rectifier
|
