PART |
Description |
Maker |
MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V5964_04 MGFC41V5964 MGFC41V596404 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TQP2420G |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET 5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz)
|
TOSHIBA
|
BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
RF2938 |
2.4GHZ SPREAD-SPECTRUM TRANSCEIVER 2.4GHZ SPREAD-SPECTRUM TRANSCEIVER TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQFP48
|
RF Micro Devices, Inc.
|
SE2522BL |
RangeCharger 2.4GHz 23 dBm Power Amplifier Preliminary Information RangeCharger⑩ 2.4GHz 23 dBm Power Amplifier Preliminary Information
|
SiGe Semiconductor, Inc.
|
SKY77607 |
Multiband Multimode Power Amplifier Module for Quad-Band GSM / EDGE and Dual-Band (Band I and VIII) WCDMA / HSDPA / HSUPA / HSPA Handsets
|
Skyworks Solutions Inc.
|
SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|