| PART |
Description |
Maker |
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| GBU8M GBU8J-BP GBU8K-BP GBU8M-BP GBU8J GBU8D-BP GB |
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 8A 400V GBU 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 600V GBU 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 800V GBU 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 50V GBU 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 100V GBU 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| IR15XB.. IR15XB08 IR15XB02 IR15XB04 IR15XB06 |
DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
15.0 Amps Single Phase Full Wave Bridge Rectifier
800V Bridge in a IR15XB package
200V Bridge in a IR15XB package
400V Bridge in a IR15XB package
600V Bridge in a IR15XB package
|
Vishay Semiconductors
International Rectifier
|
| OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SINGLE ISOLATED RECTIFIER IN HERMETIC
200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRC740 |
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=10A)
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| IR25XB04 IR25XB06 IR25XB08 IR25XB02 |
DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
200V Bridge in a IR25XB package
800V Bridge in a IR25XB package
600V Bridge in a IR25XB package
400V Bridge in a IR25XB package
|
Vishay Semiconductors
International Rectifier
|
| SBA100-04Y SBA100-04YSMP-FD |
10 A, 40 V, SILICON, RECTIFIER DIODE SMP-FD, 3 PIN
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
40V 10A Rectifier
40V/ 10A Rectifier
|
SANYO Semiconductor Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| PB1010 PB1006 PB1000 PB1001 PB1002 PB1004 PB1008 |
10A BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| KBU1001 KBU1008 KBU1002 KBU1006 KBU1000 KBU1004 KB |
10A BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| STB10NA40 STB10NA40-1 STB10NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
