| PART |
Description |
Maker |
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964A |
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC47V5864 |
5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TQP2420B |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| TIM6472-25UL TIM5964-12UL09 |
HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz
HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
| CHV2242C |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
| SKY77570-12 |
Quad-band cellular handsets encompassing
Tx-Rx Front-End Module for Quad-Band GSM /GPRS / EDGE and TD-SCDMA with 6-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
