PART |
Description |
Maker |
MCTG35P60F1 |
35A / 600V P-Type MOS Controlled Thyristor (MCT) 35A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET 30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
STGW35NB60SD GW35NB60SD |
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
OST4ML8132A |
8mm Round Intelllliigent Controll RGB LED
|
OptoSupply International OptoSupply Internationa...
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching 60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET From old datasheet system Switching (600V, 4A)
|
ROHM
|
BD3536 BD3520-14 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|