| PART |
Description |
Maker |
| MA4VAT2004-1061T |
High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz
|
MACOM[Tyco Electronics]
|
| MA4VAT904-1061T MA4VAT904-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| SGA-8343 |
Low Noise/ High Gain SiGe HBT
Low Noise, High Gain SiGe HBT 低噪声，高增益SiGe HBT
|
Ironwood Electronics
ETC[ETC]
List of Unclassifed Manufacturers
|
| BGU7004 |
SiGe:C Low Noise Amplifier MMIC
|
NXP Semiconductors
|
| NESG240033 NESG240033-A NESG240033-T1B NESG240033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| SGA-8343Z SGA-8343 |
Low Noise, High Gain SiGe HBT
|
Stanford Microdevices
SIRENZA[SIRENZA MICRODEVICES]
|
| BGU7053 |
SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| MAX2644 MAX2644EXT-T MAX264403 |
2.4GHz SiGe, High IP3 Low-Noise Amplifier
2.4GHz SiGe / High IP3 Low-Noise Amplifier
|
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
