PART |
Description |
Maker |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
NTP22N06 |
N?Channel Enhancement?Mode Silicon Gate
|
ON Semiconductor
|
ST744 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SM703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LK702 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LX521 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|