PART |
Description |
Maker |
KVR133X64C3L/128 |
128Mb 16M x 64-Bit PC133 CL3 Low Profile 168-Pin DIMM
|
Kingston Technology
|
KVR133X64C3SS128 KVR133X64C3SS_128 KVR133X64C3SS/1 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
KVR133X64C364 KVR133X64C3_64 KVR133X64C3/64 |
64MB 8M x 64-BIT PC133 CL3 168-PIN DIMM Module
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers
|
KVR133X64C2512 KVR133X64C2_512 KVR133X64C2/512 |
512MB 64M x 64-Bit PC133 CL2 Low Profile 168-Pin Dimm Module
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers
|
KVR133X64C3/1G |
1024MB 128M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
KVR400D2N3K2512 KVR400D2N3K2 KVR400D2N3K2_512 KVR4 |
MEMORY MODULE SPECIFICATION 512MB (256MB 32M x 64-BIT x 2 PCS.) DDR2-400 CL3 240-PIN DIMM KIT
|
List of Unclassifed Manufacturers ETC
|
KVR400X64C3AK2/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM (Kit of 2) 1024MB00MHz的复员非ECC CL3-3-3)内存(2盒)
|
Ecliptek, Corp.
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块) 3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块) 3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存(3.38米64 -位1列同步动态内存模块)
|
SIEMENS AG
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|