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KMM53616000CKG - 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

KMM53616000CKG_1260700.PDF Datasheet


 Full text search : 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V


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KMM53616000BKG KMM53616000BK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM53616000CK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
Samsung Semiconductor Co., Ltd.
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
STI916100-60GOI STI916100-80TOH STI916100-70GPS ST 16M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
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16M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
KODENSHI, CORP.
3M Company
MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
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Qimonda AG
KMM366F1600BK3 KMM366F1680BK3 16M x 64 DRAM DIMM(16M x 64 动RAM模块)
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SAMSUNG SEMICONDUCTOR CO. LTD.
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 16M x 4 Bit 4k EDO DRAM
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16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC 256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
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SIEMENS AG
KMM372F3200CS1 KMM372F3280CS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
Samsung Electronic
Samsung semiconductor
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 16M x 72, SDR SDRAM MCP
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http://
Austin Semiconductor, Inc
Micross Components
 
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