PART |
Description |
Maker |
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank 2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
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K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存,无缓冲,锁相环,FBGA封装
|
Square D by Schneider Electric Diodes, Inc.
|
W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp. Toshiba, Corp.
|
K4B1G1646C-ZCG9 K4B1G0846C-ZCG9 K4B1G0446C-ZCG9 |
1Gb C-die DDR3 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4T1G164QD K4T1G084QD |
1Gb D-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
K4B1G1646C-ZCF7 K4B1G0846C-ZCF7 K4B1G0446C-ZCF7 K4 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G04 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
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