| PART |
Description |
Maker |
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NN5118160 NN5118160A NN5118160AJ-60 NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM
|
N.A.
ETC[ETC]
|
| KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416C4004C KM416C4104C KM416C4004CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| NN5118160 NN5118160A NN5118160AJ-50 NN5118160AJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM 的CMOS 100万16动态随机存储器
Connector Housing; For Use With:APP PP75 Series Power Connectors; Leaded Process Compatible:No; No. of Contacts:1; Peak Reflow Compatible (260 C):No; Voltage Rating:75V RoHS Compliant: Yes
CB 8C 7#16 1#12 SKT RECP BOX
Fast Page Mode CMOS 1M x 16-Bit DRAM
|
Glenair, Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Nippon Steel Semiconductor
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
