| PART |
Description |
Maker |
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
| GM71C4400C-60 GM71C4400C-70 GM71C4400C-80 GM71C440 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| IC41SV4105 |
1M x 4bit Dynamic RAM with Fast Page Mode
|
Integrated Circuit Solution
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MN4SV17160BT-10 MN4SV17160BT-80 MN4SV17160BT-90 MN |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
PANASONIC[Panasonic Semiconductor]
|
| MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
