| PART |
Description |
Maker |
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
| K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
256Kx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
| AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
ETC
|
| KM732V787 |
128Kx32-Bit Synchronous Burst SRAM
|
Samsung Semiconductor
|
| AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
|
| KM732V787 |
128Kx32-Bit Synchronous Burst SRAM(128Kx32位同步脉静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM732V688 KM732V688L |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
| K7A203200A K7A203200A-10 K7A203200A-14 K7A203200A- |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung semiconductor
|
| K7A201800B |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung semiconductor
|
