PART |
Description |
Maker |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HCTS390MS HCTS390D HCTS390DMSR HCTS390HMSR HCTS390 |
Radiation Hardened Octal Transparent Latch/ Three-State Radiation Hardened Dual Decade Ripple Counter
|
INTERSIL[Intersil Corporation]
|
HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84 Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc. Intersil, Corp. Intersil Corporation
|
HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大 Radiation Hardened, Very Low Noise Quad Operational Amplifier Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238 10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239 10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240 10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241 10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRHN57250SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装 RADIATION HARDENED POWER MOSFET
|
International Rectifier, Corp.
|
JANSR2N7498T2 IRHF57230SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔(到39
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRHN7130 IRHN7130-15 |
Simple Drive Requirements RADIATION HARDENED POWER MOSFET 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
|
International Rectifier
|
XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp. Xilinx, Inc.
|