PART |
Description |
Maker |
FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B |
Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC Corp.
|
SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM |
PNP EXPITAXIAL PLANAR TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
友顺科技股份有限公司 UTC[Unisonic Technologies]
|
FN1A4Z FN1A4Z-L FN1A4Z-T2B FN1A4ZM69 |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD Compound transistor
|
Honeywell International, Inc. NEC
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
2N2060A |
Dual Amplifier Transistor(Small Signal Dual Transistor in a TO-77 Hermetic Package具有放大器功能的双晶体管(TO-77封装两个小信号晶体管 双放大器晶体管(双小信号晶体管采用TO - 77气密封装)(具有放大器功能的双晶体管(至77封装两个小信号晶体管)) DUAL AMPLIFIER TRANSISTOR 500 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF
|
Central Semiconductor, Corp. TT electronics Semelab, Ltd. Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SD773 2SD773U4 2SD773-L2-AZ |
2000 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-221VAR NPN SILICON TRANSISTOR From old datasheet system
|
NEC Corp. NEC[NEC]
|