| PART |
Description |
Maker |
| 2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| IHP10T120 |
IGBTs & DuoPacks - 10A / 1200V IGBT and 4A / 1200V Diode in DuoPack
|
Infineon
|
| RHRD6120S RHRD6120 FN3981 |
6A, 1200V Hyperfast Diodes(6A, 1200V 超快速二极管)
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RURP4120CC |
4A, 1200V Ultrafast Dual Diode(4A, 1200V 超快双二极管)
|
INTERSIL[Intersil Corporation]
|
| HGT1S2N120 HGT1S2N120CNS |
45A, 600V, UFS Series N-Channel IGBT
13A 1200V NPT Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IXSK35N120AU1 |
1200V high voltage IGBT with diode
|
IXYS[IXYS Corporation]
|
| HGTP5N120BN HGT1S5N120BNS FN4599 |
From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| CM200E3U-24F |
IGBT Modules:1200V
HIGH POWER SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M81738FP |
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
|
Mitsubishi Electric Semiconductor
|
| 2MBI100HB-120-50 |
HIGH SPEED IGBT MODULE 1200V / 100A / 2 in one package
|
Fuji Electric
|
