| PART |
Description |
Maker |
| HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
256M; 100MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword ?16-bit ?4-bank/16-Mword ?8-bit ?4-bank /32-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| HM5216165 HM5216165TT-10H HM5216165TT-12 |
16M LVTTL INTERFACE SDRAM (512-kword x 16-bit x 2-bank)
|
Elpida Memory
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| M390S6450AT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S2816 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
