| PART |
Description |
Maker |
| HGTG34N100E2 |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
| APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXGA12N100AU1 IXGA12N100U1 IXGP12N100AU1 IXGP12N10 |
1000V IGBT
|
IXYS
|
| FGL60N100BNTDTUNL |
1000V, 60A NPT-Trench IGBT
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 34A条（丁）|251
|
Vishay Intertechnology, Inc.
|
| FGA50N100BNTD2 |
1000V, 50A NPT-Trench IGBT CO-PAK
|
Fairchild Semiconductor
|
| IRG7PG42UD-EPBF |
1000V UltraFast Co-Pack IGBT in a TO-247 package
|
International Rectifier
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
