| PART |
Description |
Maker |
| 26MB40A 36MB80A 35AMB12026MB 25AMB12026MB 35AMB120 |
SINGLE PHASE BRIDGE 单相桥式
4-Pole Solid State Relay w/o Protection SCR 单相桥式
IC REG LDO 1.0A 1.8V TO-252
IC DAA LITELINK III FW RING DET 3.3V TUBED
equipment to provide connection and isolation to/from the public telephone network
50V Bridge in a D-34A package
SINGLEPHASEBRIDGE
100V Bridge in a D-34A package
1200V Bridge in a D-34A package
400V Bridge in a D-34A package
600V Bridge in a D-34A package
800V Bridge in a D-34A package
1000V Bridge in a D-34A package
|
International Rectifier, Corp.
InternationalRectifier
IRF[International Rectifier]
|
| FGL60N100BNTDNL |
1000V, 60A NPT-Trench IGBT 60 A, 1000 V, N-CHANNEL IGBT, TO-264AA
|
Fairchild Semiconductor, Corp.
|
| FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| STL34NF06 |
N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFET?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| FDH34N40 |
34A, 400V, 0.115Ohm, N-Channel SMPS Power MOSFET
34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| FGA50N100BNTD2 |
1000V, NPT Trench IGBT
|
Fairchild Semiconductor
|
| FGA50N100BNTD |
1000V, NPT Trench IGBT
|
Fairchild Semiconductor
|
| SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 34A条（丁）|251
|
Vishay Intertechnology, Inc.
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
