PART |
Description |
Maker |
BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
2DD2679 2DD2679-13 2DD2679-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRGPC50S |
600V Discrete IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
EN3096A 2SC4489T-AN |
Bipolar Transistor Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRG4BH20K-S |
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
|
Infineon Technologies AG
|
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
|
INFINEON[Infineon Technologies AG]
|