| PART |
Description |
Maker |
| GS8170LW72C-333I GS8170LW36 GS8170LW36C-200 GS8170 |
18Mb Common I/O LW SigmaRAMs
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
| GS8330DW36 GS8330DW36-200 GS8330DW72C GS8330DW36-2 |
36Mb Common I/O SigmaRAMs
Double Late Write SigmaRAM
|
ETC
GSI[GSI Technology]
|
| GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18T-200 GS8160Z18BT-250 GS8160Z18BT-150 GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS816218 GS816236 GS816272 |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8162ZV18B GS8162ZV36B |
18Mb Burst SRAMs
|
GSI Technology
|
