| PART |
Description |
Maker |
| FY8ABJ-03 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Renesas Electronics Corporation
|
| FX30KMJ-2 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| FX30SMJ-3 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
|
| FX6KMJ-06 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FX6KMJ-3 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
|
| FX6ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE 6 A, 60 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| ECH8605 |
Pch Pch
4 A, 30 V, 0.067 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
SANYO
|
| FX20ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE
ER 3C 3#16S SKT RECP LINE 20 A, 60 V, 0.097 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| TT8J11 |
1.5V Drive Pch Pch MOSFET
|
Rohm
|
