| PART |
Description |
Maker |
| FQD5N60CTM |
600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FQPF2N50C FQP2N50C |
500V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU1N60 FQD1N60 FQD1N60TM FQU1N60TU |
600V N-Channel QFET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU |
600V N-Channel QFET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF8N60CT |
600V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MIC6270 MIC6270BM5 |
IttyBittyComparator Advance Information COMPARATOR, 9000 uV OFFSET-MAX, 600 ns RESPONSE TIME, PDSO5
FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
IttyBitty Comparator Advance Information
IttyBitty⑩ Comparator Advance Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60 |
600V N-Channel SuperFET
600V N-Channel MOSFET
From old datasheet system
|
Fairchild Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
