| PART |
Description |
Maker |
| FQI4N80TU |
800V N-Channel QFET
|
Fairchild Semiconductor
|
| STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条，TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| FQPF6N80C FQP6N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SPP02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| SPA11N80C3 SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
|
Infineon Technologies AG
|
| STU9NC80Z STU9NC80ZI STU9NC80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW12NK80Z |
CONNECTOR ACCESSORY
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 800V - 0.65 OHM - 10.5 A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
