| PART |
Description |
Maker |
| IRFB61N15D |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
|
International Rectifier
|
| FQA36P15 |
150V P-Channel MOSFET 36 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
150V P-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQB14N15 FQB14N15TM FQI14N15 |
150V N-Channel MOSFET
150V N-Channel QFET
|
http://
Fairchild Semiconductor Corporation
|
| FQI5N15 FQB5N15 FQI5N15TU FQB5N15TM |
150V N-Channel MOSFET
150V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB46N15 FQI46N15 FQB46N15TMAM002 |
150V N-Channel QFET
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HUF75831SK8T HUF75831SK8 |
3A, 150V, 0.095 Ohm, N-Channel, UltraFETPower MOSFET
3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STS5N150 9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFETPOWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
STMicroelectronics
意法半导
ST Microelectronics
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| SFL3200_39 SFL3200-39 SFL3200/39 |
Logic Level 12A 150V .17Ω N-Channel Power MOSFET
Logic Level 12A 150V .17ヘ N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IRF3315L IRF3315S IRF3315STRL IRF3315STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
