| PART |
Description |
Maker |
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| FPD2250-000S3 FPD2250-000SQ FPD2250 FPD2250-000 |
1.5W POWER pHEMT
|
RF Micro Devices
|
| LP6872 |
0.5W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD2000V |
2W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1000V |
1W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1050-000 FPD1050-000S3 FPD1050-000SQ |
0.75W POWER pHEMT
|
RF Micro Devices
|
| FPD750P100 |
0.5W PACKAGED POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD6836 |
0.25W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1000AS |
1W PACKAGED POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
