| PART |
Description |
Maker |
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLK057WG |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
| HWL27YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWF1682RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL36YRA |
L-Band GaAs Power FET
|
Electronic Theatre Controls, Inc.
|
