| PART |
Description |
Maker |
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL810IQ-4C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL1500IU-2C |
L-Band High Power GaAs FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E090IY |
L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL357ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
