PART |
Description |
Maker |
F12C40 F12C60 F12C30 F12C50 |
POWER RECTIFIERS(12A,300-600V) 大功率整流器(第12A ,300 - 600V的)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
U30D30 U30D40 U30D50 U30D60 U30D40A |
Switchmode dual ultrafast power rectifier, 30A, 400V, 50ns POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U15A60 U15A50 U15A30 U15A40 |
FAST RECTIFIERS(15A/300-600V) FAST RECTIFIERS(15A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
H30D60 H30D30 H30D40 H30D50 |
HIGH EFFICIENCY RECTIFIERS(30A/300-600V) HIGH EFFICIENCY RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V FREDFET
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|